DYW420 Screen Buffing Polisher
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Advanced Double Sided Lapping Machine

DYS Substrate Flat Lapping Machine

Circuited SiC Wafer GrindingDyan has further upgraded its flat lapping and polishing series, enabling this equipment to excel in the lapping and polishing of semiconductor materials, delivering supreme accuracy and surface finishes. This equipment is fully compatible with vacuum clamping for both bonded and non-bonded wafers, such as ceramic bonded wafers, gallium arsenide bonded wafers, silicon carbide wafers, silicon wafers, and more.

Accessible TTV (6-inch SiC) 2.8 μm
Accessible Flatness (6-inch SiC) 2 μm
Accessible Roughness (SiC CMP) Sa. 0.2 nm
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Brief Introduction

The substrate grinder is an upgrade from the flat lapping and polishing series, primarily used for planarization and CMP polishing of semiconductor materials such as wafers and substrates. This high-end series is newly equipped with an infrared temperature sensor, plate thermal control system, vacuum system, and end point detector, and allows users to operate each station individually through a GUI control panel. In addition, the upgraded mechanical parts such as motors, spindle and bearings have the ability to achieve higher performance than the regular models.
Specifications
Key Facts
Sampling
Features
  • Flat Surface Process
  • 350 KGF Downward Pressure
  • Pneumatic Pressurization
  • Facing & Grooving System (FGS) ◉
  • Plate Thermal Control System ◉
  • End Point Detector (EPD) ◉
  • Swing Process ◉
  • Dust Proof Window
  • Universal Pressure Platen ◉
  • Infrared Centralization Assistance ◉
  • Applicable for Semiconductor Wafer

Engineering Intent

Semiconductor equipment emphasizes precision and stability. To further control the machining dimensions of workpieces accurately, this series of equipment incorporates in-process detection instruments to control the processing duration. Additionally, we have equipped this series with a thermal control system. This is to maintain the abrasive materials and liquids at a stable processing temperature, while also reducing thermal deformation of the abrasive plate that could affect processing precision.
Parameters
System Model DYS855 DYS1270
Diameter of Lapping Plate (mm) ∅ 855 × ∅ 255 × 12 ∅ 1270 × ∅ 380 × 12
Max. Diameter of Carrier (mm) ∅ 360 ∅ 485
Number of Stations 4 4
Rotation Rate of Lapping Plate (rpm) 0 - 120 0 - 80
Rotation Rate of Air Cylinder (rpm) 0 - 60 0 - 45
Pneumatic Pressure Range (kgf) 20 - 300 30 - 350
Main Motor (kW) 11 23
Temperature Control Tolerance (℃) ± 2 ± 2
EPD Wavelength (nm) *optional 360 - 1100 360 - 1100
Swing Stroke (mm) *optional 50 50
Feed Rate of FGS (mm/min) *optional 10 - 120 10 - 120
Stroke of FGS (mm) *optional 520 775
Weight (kgf) 2300 3500
Dimension (L×W×H) (mm) 1200 × 2150 × 2250 1780 × 3190 × 2550
Key Facts

1. Plate Thermal Control System

Continous operation can lead to an increase in the lapping and polishing plate's surface temperature, which might result in thermal deformation, compromising the precision of the machining process. To tackle this problem, the equipment comes equipped with an infrared thermal control system designed to monitor and regulate the temperature of the plate surface. This system features a lift-able infrared thermal sensor, an external chiller, and a chilling base designed specifically for the lapping and polishing plate. With this setup, we can effectively keep the plate temperature in check, ensuring that machining accuracy is maintained, even during long runs.

Lapping Plate Cross Section

Infrared Thermal Sensor

2. End Point Detector (Available in CMP Model Only)

In-process end-point detectors are essential in chemical mechanical planarization (CMP) processes, actively monitoring the procedure in real-time. They specifically utilize variations in light emission, such as intensity or spectrum changes, to accurately signal the completion of the polishing layer. This precise end-point detection is critical for ensuring that just the right amount of material is removed, achieving the target surface finish without the risk of over-polishing. By analyzing the detected signals, operators can fine-tune the pressure, speed, and slurry composition used in the process, tailoring them to achieve optimal removal rates and surface quality. Moreover, the system can help predict when the CMP equipment, such as the polishing pad or slurry, may require maintenance or replacement.

In-Process EPD Inspection

3. Clamping Method

The clamping method is selected based on the wafer's adhesion methods. There are primarily two types of clamping: direct wafer vacuum clamping and vacuum clamping to a ceramic carrier bonded with wafers. The main distinction lies in the materials and designs used: direct wafer clamping employs a microporous ceramic platen for clamping, whereas clamping to a ceramic carrier involves a metal platen with vacuum grooves.

Additionally, microporous ceramic vacuum is also suitable for wafer-ring clamping which includes magnetic holders along its edges, ensuring the wafer ring stays securely in place and does not detach.

Clamping Methods

4. Swing Process

The swing process facilitates a sequential, spiraling, cross-path processing route for the workpiece, resulting in exceptionally good flatness. Additionally, swing process helps to even out the wear on the plate's abrasive layer. It's well understood that in lapping and polishing, the product and the abrasive wear each other down. Workpieces processed without swinging are confined to a fixed area. If the processed product's width is narrower than that of the abrasive layer's unilateral width, prolonged processing could lead to a concave surface on abrasive layer, thereby compromising the machining flatness. If the product's size exceeds the unilateral width of the disc surface, a conditioning wheel can be added for minor adjustments, ensuring uniformity of the disc surface.

*The swing process is exclusively available in the twin platen model.

Swing Process Motion

5. Universal Pressure Platen

To control the wafer's thickness variation, a universal pressure joint connects the platen to its spindle. During operation, a pneumatic cylinder applies a consistent vertical force to the platen spindle. The universal pressure joint, bearing this downward pressure, also accommodates the counterforce exerted by the wafer. If the wafer's surface becomes inclined, the counterforce on the wafer's thicker area increases as the joint distributes more of vertical force on this area. Thus removal rate of the area increases, thereby ensuring uniform thickness across the wafer.

Platen Force Distribution

6. Infrared Centralization Assistance

Infrared centralization positioners are typically used for loading ceramic carrier. The positioner emits two laser beams towards the lapping plate, with the laser endpoints tangentially aligning with the edges of the pressure platen. By aligning the ceramic carrier's tangent with the lasers, the pressure platen can descend without obstruction, pressing down on and adhering to the ceramic carrier. However, the choice of loading method also depends on user preference. You can opt to manually lift and align the ceramic carrier to adhere the pressure platen, or you can choose this more effortless method for loading and unloading.

Platen Force Distribution

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Dyan Precision Technology situated in the innovative city Shenzhen, occupies a production plant area of approximately 13,000 square meters and specializes in the field of grinding, lapping and polishing technology. With a focus on research and development, production, and sales, the company offers a diverse range of high-precision equipment such as flat lapping and polishing equipment, wafer grinder, wax bonder, screen polisher, and associated consumables. These products find extensive application in the precise processing of mechanical seals, semiconductor fabrication, smart phone, optics, aerospace, aviation, automotive, LED technology, metrology, solar enegery, nuclear energy, jewellary, and various other industries.
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*Reminder: we only offer once free and limited sampling. The expenses of delivery and prourement of the sample entity are to be covered by the sender.

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Applicability

Process

Industry

Product

Grinding
and CMP

Wafer Substrate

AIN

GaAs

GaN

Ge

Ge-Si

Glass

InP

InSb

Quartz

Sapphire

Si

SiC

ZnO

Semiconductor
Device

Detector Device

Filter Device

Laser Device

Micro LED

Mini LED

Optical Communication Device

Power Device

RF Device

Silicon Photonic Device

MEMS

Accelerometer

Gyroscope

Humidity Sensor

Microphone

Optical Sensor

Pressure Sensor

Advanced Packaging

Fan-out

SIP

TSV

Flat Optics

Holographic Slide

Glass Slide

Optical Lens

Optical Reflector
Sampling Showcase

Sample
Thumbnail

Major
Material

Dimension
(inch)

Applied
Machining

Thickness
(μm)

TTV
(μm)

Roughness
(Sa/nm)

Flatness
(μm)

Silicon
Carbide

6

Coarse Grinding
Fine Grinding

120

2.472

2.404

1.518

Silicon
Carbide

6

Coarse Grinding
Fine Grinding
CMP

 150

2.643

0.745

1.343

Gallium
Nitride

4

Coarse Grinding
Fine Grinding
CMP

300

2.181

1.163

1.089

Germanium

4

Coarse Grinding
Fine Grinding
CMP

145

2.205

0.856

1.273

Sapphire

4

Coarse Grinding
Fine Grinding
CMP

220

2.315

0.933

1.148

Gallium
Arsenide

4

Coarse Grinding
Fine Grinding

60

2.240

8.065

1.928

Silicon

12

Coarse Grinding
Fine Grinding

75

2.782

10.065

1.455

Piezoelectric
Ceramic

2

Coarse Grinding

50

1.651

32.468

0.843

Solar Wafer

8.839

Coarse Grinding

100

3.188

13.427

2.212