DYC2000 Full Automatic Edge Grinder
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DYG2000 Full Automatic Wafer Grinder

DYG3000 Full Automatic Wafer Grinder

Circuited SiC Wafer GrindingWe have seamlessly integrated Stress Relief System into DYG2000 wafer grinder series. This strategic enhancement boosts yield rates by reducing internal stress from the post-grinding. Featuring an array of advanced technologies, this series is meticulously designed to optimize both the wafer processing environment and the equipment’s internal conditions. This advancement positions us among the global elite in the semiconductor grinding equipment industry.

Accessible TTV (6-inch SiC) 2.8 μm
Accessible Thickness (6-inch SiC) 60 μm
Accessible Roughness (SiC Fine Grinding) Sa. 0.6 nm
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Brief Introduction

The FDG3000 series maintains the dry-in-dry-out grinding mode and is specifically integrates Stress Relief System. This system effectively reduces the risk of wafer transfer between the grinding and polishing stages and achieves an epi-ready condition on independent equipment. Additionally, the Stress Relief System minimizes wafer stress non-uniformity, enhancing the wafer's toughness and reducing the risk of chipping during the back grinding process. Furthermore, the stress relief system can be tailored to the wafer material, offering a choice between dry polishing and CMP polishing for wider applicability.

Specifications
Key Facts
Sampling
Features
  • Dry-In-Dry-Out Process
  • Air Bearing Grinding Spindle ◉
  • CCD Orientation Aligner
  • Aerostatic Granite Turntable ◉
  • Microporous Vacuum Table ◉
  • Vacuum Table Cleaner
  • In-Process Thickness Gauge ◉
  • Sensorial Cassette I/O Dock
  • Dual-Fluid Spray Wafer Cleaner
  • Four-Axis Wafer Docking Robot
  • Built-in Acoustic Emission (AE) Sensor ◉
  • Stress Relief System ◉
  • Grinding Inclination Adjuster

Engineering Intent

The yield of wafers in both the raw-wafer grinding and back grinding processes is closely related to the grinding abrasive. In ultra-thin grinding processes, the excessive roughness and roughness variation on both sides of the wafer often lead to a significant warpage and greatly increase the risk during wafer transportation and following processes due to the burden of internal stress. Therefore, mitigating this risk can be achieved by adding a polishing process after grinding.

Work Flow
  • The Docking Robot grips a wafer from the Cassette and places it on the Aligner to centralize it.
  • The Table Cleaner wipes and cleans the Vacuum Table.
  • The Mounting Robot places the wafer on the Vacuum Table.
  • The wafer enters the Coarse Grinding sector through the rotation of the Turntable.
  • Then, the wafer moves into the Fine Grinding sector.
  • Following this, the wafer enters the Stress Relief sector for dry-polishing or Chemical Mechanical Polishing (CMP).
  • The Demounting Robot removes the wafer from the polishing sector and places it on the Wafer Cleaner.
  • Finally, the Docking Robot grips the dried wafer and returns it to the Cassette, or it transfers the wafer to the mounter.
Parameters
System Model DYG3200 DYG3300
Max. Wafer Diameter (inch) 8 12
Grinding Wheel Diameter (mm) ∅ 209/254 ∅ 312
CMP Wheel Diameter (mm) ∅ 450 ∅ 450
Grinding Spindle Power (kW) 7.5 11
Stress Relief Spindle Power (kW) 5.5 5.5
Grinding Rotation Rate (rpm) *ccw & cw 500 - 3500 500 - 4000
Stress Relief Rotation Rate (rpm) *ccw & cw 200 - 1000 200 - 1000
Table Rotation Rate (rpm) *ccw & cw 10 - 450 10 - 450
Z-aixs Stroke (mm) 100 100
Z-axis Feed Rate (μm/s) 0.1 - 80 0.1 - 80
CMP Swing Stroke (mm) 50 50
Thickness Gauge Resolution (μm) 0.1 0.1
Acoustic Emission Signal (kHz) *optional 20 - 1000 20 - 1000
Total Power (kW) 33 37
Weight (kgf) 7500 7900
Dimension (L×W×H) (mm) 3200 × 1980 × 2000 3200 × 1980 × 2000
Key Facts

1. Aerostatic Granite Turntable

In the full-auto models, all the worktables are mounted on a granite aerostatic turntable. These worktables are propelled by the turntable to orbit around the center, facilitating the transition between different grinding stations. During the grinding process, the turntable's rotation is halted by applying reverse vacuum suction through the aerostatic mechanism, ensuring precise positioning and stability during operation.

2. Air Bearing Spindle

The grinding spindle's bearing leverages dry and clean air funneled through microporous layers to support the rotor shaft against the stator, enabling fast and smooth rotation. This design eliminates any physical contact during the spindle's spin. Known as "Microporous Air Bearings," this type of bearing offers unmatched durability and stability for the spindle. 

Following a dynamic balance adjustment, Dyan's air bearing spindle achieves extremely low amplitude rotation at 3000 RPM, with radial pulsation under 0.1 micron.

Microporous Air Bearing

3. Worktable and Vacuum

The worktable is driven by a high-resolution servo motor capable of rotating, featuring an automatic homing function. For models equipped with a contact thickness gauge, the sealing ring of the vacuum worktable is made of ceramic and serves as the benchmark reference for the thickness gauge.

The vacuum clamping adapts microporous ceramic as the medium which can be selectively equipped with single-size or universal-size and includes a blow-back function, allowing for the safe removal of wafers and expulsion of impurities from within the ceramic pores. Universal vacuum table can accommodate wafers ranging from 2 inches to 12 inches on the same table by embedding adsorption areas of various sizes. Additionally, custom-designed vacuum table is provided for irregularly shaped planes.

Universal Vacuum Table

4. Difference of In-process Thickness Gauges

A high-precision, in-process thickness gauge (IPG) is a crucial component in grinders, directly impacting the consistency of grinding precision. It also offers the significant benefit of providing precise offset measurements for the grinding wheel's consumption. Dyan provides two sorts of in-process thickness gauges available as options for monitoring wafer thickness under various grinding conditions.

  • The Contact Gauge features two precision probes that maintain constant contact with the wafer and the benchmark on worktable during inspection. The difference in height between the two points being measured indicates the wafer's thickness (or the thickness including the UV tape). This gauge may leave a barely visible circular imprint, which can be removed in the fine grinding process.
  • The Non-Contact Gauge employs infrared technology to assess the wafer's true thickness by analyzing the volume of ray absorption, reflection, and dispersion. This method does not include the thickness of the UV film or adhesive in its measurements. It is essential for finish polishing and ultra-thin grinding to ensure the safety of the wafer.

IPG Measurement Range Diagram

5. Built-in Acoustic Emission Sensor

A built-in Acoustic Emission (AE) Sensor in a grinding spindle is a sophisticated in-process monitoring tool that detects high-frequency sounds produced during the grinding process. These sounds are converted into electrical signals for analysis, providing valuable insights into the grinding conditions, such as the interaction between the grinding wheel and workpiece, and the presence of material defects or wheel dullness. This real-time feedback enables on-the-fly process optimization, improving surface finish quality, reducing tool wear, and enhancing efficiency.

Additionally, the AE sensor aids in preventive maintenance by predicting equipment failures, thus minimizing downtime and extending the lifespan of grinding machinery. This integration not only optimizes the grinding efficiency and surface finish but also supports predictive maintenance, reducing downtime and extending the lifespan of the equipment.

Built-in AE Sensor 

6. Stress Relief System

The Stress Relief System is an additional process station featured in the triple-spindle model, specifically designed to reduce the internal stress within wafers, thereby enhancing the yield of wafer processing. This system integrates two distinct techniques: Dry Polishing and Chemical Mechanical Polishing (CMP), each selected based on the material hardness of the wafers being processed.

For the dry polishing approach, we employ ultra-fine grinding wheels, ensuring precise and gentle material removal. In contrast, for CMP, we use a specially developed polyurethane pad, designed to provide effective planarization with minimal material damage. These approaches allow for customized stress relief tailored to the specific requirements of different wafer materials, ultimately securing higher process yields and improved surface smoothness.

Stress Relief CMP Pad 

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Dyan Precision Technology situated in the innovative city Shenzhen, occupies a production plant area of approximately 13,000 square meters and specializes in the field of grinding, lapping and polishing technology. With a focus on research and development, production, and sales, the company offers a diverse range of high-precision equipment such as flat lapping and polishing equipment, wafer grinder, wax bonder, screen polisher, and associated consumables. These products find extensive application in the precise processing of mechanical seals, semiconductor fabrication, smart phone, optics, aerospace, aviation, automotive, LED technology, metrology, solar enegery, nuclear energy, jewellary, and various other industries.
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Applicability

Process

Industry

Product

Grinding
and CMP

Wafer Substrate

AIN

GaAs

GaN

Ge

Ge-Si

Glass

InP

InSb

Quartz

Sapphire

Si

SiC

ZnO

Semiconductor
Device

Detector Device

Filter Device

Laser Device

Micro LED

Mini LED

Optical Communication Device

Power Device

RF Device

Silicon Photonic Device

MEMS

Accelerometer

Gyroscope

Humidity Sensor

Microphone

Optical Sensor

Pressure Sensor

Advanced Packaging

Fan-out

SIP

TSV

Flat Optics

Holographic Slide

Glass Slide

Optical Lens

Optical Reflector
Sampling Showcase

Sample
Thumbnail

Major
Material

Dimension
(inch)

Applied
Machining

Thickness
(μm)

TTV
(μm)

Roughness
(Sa/nm)

Flatness
(μm)

Silicon
Carbide

6

Coarse Grinding
Fine Grinding

120

2.472

2.404

1.518

Silicon
Carbide

6

Coarse Grinding
Fine Grinding
CMP

 150

2.643

0.745

1.343

Gallium
Nitride

4

Coarse Grinding
Fine Grinding
CMP

300

2.181

1.163

1.089

Germanium

4

Coarse Grinding
Fine Grinding
CMP

145

2.205

0.856

1.273

Sapphire

4

Coarse Grinding
Fine Grinding
CMP

220

2.315

0.933

1.148

Gallium
Arsenide

4

Coarse Grinding
Fine Grinding

60

2.240

8.065

1.928

Silicon

12

Coarse Grinding
Fine Grinding

75

2.782

10.065

1.455

Piezoelectric
Ceramic

2

Coarse Grinding

50

1.651

32.468

0.843

Solar Wafer

8.839

Coarse Grinding

100

3.188

13.427

2.212